92612 tkim/n1809ab tkim tc-00002075 no. a1601-1/6 http://onsemi.com semiconductor components industries, llc, 2013 august, 2013 MCH6001 rf transistor 8v, 150ma, f t =16ghz npn dual mcph6 stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty. features ? low-noise use : nf=1.2db typ (f=1ghz) ? high cut-off frequency : f t =16ghz typ (v ce =5v) ? high gain : | s21e | 2 =16db typ (f=1ghz) ? composite type with 2 rf transistor mch4020 in one package facilitating high-density mounting speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit collector-to-base voltage v cbo 15 v collector-to-emitter voltage v ceo 8v emitter-to-base voltage v ebo 2v collector current i c 150 ma collector dissipation p c when mounted on glass epoxy substrate 1unit 400 mw total dissipation p t when mounted on glass epoxy substrate 600 mw junction temperature tj 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) 7022a-019 ordering number : ena1601a product & package information ? package : mcph6 ? jeita, jedec : sc-88, sc-70-6, sot-363 ? minimum packing quantity : 3,000 pcs./reel packing type : tl marking electrical connection gt lot no. lot no. tl 1 : base1 2 : emitter1 3 : collector2 4 : base2 5 : emitter2 6 : collector1 mcph6 2.0 0.25 1.6 2.1 0.25 0.85 0.3 0.65 0.15 0 to 0.02 0.07 654 123 654 123 b1 e1 c2 c1 e2 b2 MCH6001-tl-e
MCH6001 no. a1601-2/6 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max collector cutoff current i cbo v cb =5v, i e =0a 1.0 a emitter cutoff current i ebo v eb =1v, i c =0a 1.0 a dc current gain h fe v ce =5v, i c =50ma 60 150 gain-bandwidth product f t v ce =5v, i c =50ma 13 16 ghz forward transfer gain | s21e | 2 v ce =5v, i c =50ma, f=1ghz 16 db noise figure nf v ce =1v, i c =10ma, f=1ghz 1.2 1.8 db note) pay attention to handling since it is liable to be affected by static electricity due to the high-frequency process adopt ed. ordering information device package shipping memo MCH6001-tl-e mcph6 3,000pcs./reel pb free it13901 150 90 120 60 30 0 0 0.2 0.4 0.6 0.8 1.0 1.2 it13902 068 4 2 0 20 40 60 80 100 140 120 v ce =1v 5v i b =0 ma 1.5ma 1.2ma 0.9ma 0.3ma 0.6ma i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- ma i c -- v be base-to-emitter voltage, v be -- v collector current, i c -- ma
MCH6001 no. a1601-3/6 collector current, i c -- ma noise figure, nf -- db it13908 nf -- i c | s21e | 2 -- i c collector current, i c -- ma forward transfer gain, | s21e | 2 -- db f t -- i c collector current, i c -- ma gain-bandwidth product, f t -- ghz collector dissipation, p t, p c -- mw p t, p c -- ta ambient temperature, ta -- c 1.0 27 35 10 27 35 100 0 1 2 3 4 v ce =1v 5v f=1ghz 0.1 23 57 1.0 23 57 10 1.0 7 5 2 3 3 cob -- v cb collector-to-base voltage, v cb -- v output capacitance, cob -- pf it13905 f=1mhz 0 5 10 15 20 1.0 23 57 2 10 357 2 100 it15151 2 3 5 7 10 2 3 5 7 100 1.0 100 22 357 10 2 357 it15152 0 20 40 60 80 100 120 140 160 it15153 0 100 400 300 200 700 600 500 1.0 p c 1unit p t total dissipation when mounted on glass epoxy substrate it13903 0.1 23 57 1.0 23 57 10 1.0 5 7 3 2 it13904 2 2 3 5 7 100 3 257 3 257 3 2 v ce =5v 1.0 10 100 1v f=1mhz h fe -- i c collector current, i c -- ma dc current gain, h fe cre -- v cb collector-to-base voltage, v cb -- v reverse transfer capacitance, cre -- pf
MCH6001 no. a1601-4/6 embossed taping speci cation MCH6001-tl-e
MCH6001 no. a1601-5/6 outline drawing land pattern example MCH6001-tl-e mass (g) unit 0.008 * for reference mm unit: mm 0.65 0.65 0.4 2.1 0.6
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